| 摘要 |
PURPOSE: A method for manufacturing a semiconductor device is provided to be capable of restraining defects of a gate layer by adding piranha cleaning to SC-1 cleaning. CONSTITUTION: A gate oxidation pre-cleaning process is performed by piranha cleaning using mixed solutions of H2SO4 and H2O2 at the temperature of 100-130°C and SC-1 cleaning using mixed solution of NH4OH, H2O2 and H2O without using megasonic. At this time, the rate of H2SO4 : H2O2 in the piranha cleaning is 2:1-50:1. Also, the piranha cleaning and the SC-1 cleaning are performed by in-situ.
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