| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide the element structure of an optical semiconductor exhibiting excellent light extraction efficiency and excellent stability in the emission quantity. <P>SOLUTION: On a semiconductor single crystal substrate, i.e., an n-GaAs substrate (1), a conductive layer (7) of single crystal Al is formed in stripe or round shape, an insulation layer (8) of the same shape as the conductive layer (7) is formed thereon, and a single crystal n-GaAsP layer (2) of a type different from the n-GaAs substrate (1) is formed further thereon as a growth layer. <P>COPYRIGHT: (C)2004,JPO |
