METHOD FOR FABRICATING A SOI SUBSTRATE A HIGH RESISTIVITY SUPPORT SUBSTRATE

摘要

A method for fabricating a substrate containing a useful semiconductor layer on a support having high resistivity comprises the following successive steps: (a) preparing a base substrate in semiconductor material containing a controlled quantity of interstitial oxygen, (b) conducting determined a heat treatment so as to achieve at least partial precipitation of the interstitial oxygen of the base substrate, (c) on one surface of the base substrate intended to receive a useful layer, removing a superficial layer over a controlled depth, (d) forming said useful layer on said surface of the base substrate, the latter forming the support. Application in particular to SOI substrates with high resistivity for high frequency electronic circuits.