| 摘要 |
A method and an integrated circuit having power rails under transistors. In a preferred embodiment, power rails are formed over a substrate. Devices, such as FET transistors, are formed over the power rails. A preferred device is an inverter. The method comprises forming a first power rail (VSS) over the substrate. Then forming a second power rail (e.g., VDD) over the first power rail. The second power rail is insulated from the first power rail. Next, transistors are formed over the first and the second power rails.
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