发明名称 |
Non-oxidizing spacer densification method for manufacturing semiconductor devices |
摘要 |
Non-oxidizing spacer densification method for producing semiconductor devices, such as MOSFET devices, and that may be implemented during semiconductor fabrication with little or substantially no polycide adhesion loss experienced during spacer densification. The method may be implemented to provide good polycide adhesion characteristics with reduced process complexity over conventional methods by eliminating the need for additional process steps such as metal silicide encapsulation or polysilicon surface treatments.
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申请公布号 |
US6642112(B1) |
申请公布日期 |
2003.11.04 |
申请号 |
US20010918364 |
申请日期 |
2001.07.30 |
申请人 |
ZILOG, INC. |
发明人 |
LOWE BRETT D.;SMYTHE JOHN A.;CARNS TIMOTHY K. |
分类号 |
H01L21/8238;(IPC1-7):H01L21/823 |
主分类号 |
H01L21/8238 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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