发明名称 |
Method for testing for blind hole formed in wafer layer |
摘要 |
A new method for detecting blind holes in the contact layer of a multi-chip semiconductor test wafer makes use of the fact that if the hole is not a blind hole, a subsequent etch step extends the hole a predetermined distance into the layer immediately underlying the contact layer. After a predetermined number of holes have been etched through the contact layer and for a predetermined distance into the layer underlying the contact layer, the contact layer is stripped to expose the holes in the underlying layer. These holes are scanned optically by a commercial apparatus that ordinarily detects wafer defects that resemble the holes. The missing holes are detected by comparing the holes of different chips on the test wafer. The test is particularly useful with a high density plasma etch because these holes typically have a very small diameter in relation to the thickness of the contact layer.
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申请公布号 |
US6642150(B1) |
申请公布日期 |
2003.11.04 |
申请号 |
US19990473029 |
申请日期 |
1999.12.28 |
申请人 |
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY |
发明人 |
HUANG CHUAN-CHIEH;TANG WEN-HSIANG;YEN MING-SHUO;PENG CHIANG-JEN;CHEN PEI-HUNG |
分类号 |
G01N21/956;H01L21/66;H01L23/544;(IPC1-7):H01L21/302 |
主分类号 |
G01N21/956 |
代理机构 |
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代理人 |
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地址 |
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