| 摘要 |
A semiconductor laser device includes: active layer; first cladding layer, which is formed on the active layer and is made of (AlX1Ga1-X1)Z1In1-Z1P (where 0<=X1<=1 AND 0<Z1<1) of a first conductivity type; current blocking layer, which is formed on the first cladding layer and is made of (AlYGa1-Y)Z2In1-Z2P (where 0<=Y<=1 AND 0<Z2<1) of a second conductivity type and has striped region; and second cladding layer, which is formed at least in the striped region and is made of (AlX2Ga1-X2)Z3In1-Z3P (where 0<=X1<=1 AND 0<Z3<1) of the first conductivity type. X1, X2 and Y have relationships represented as Y>X1 and Y>X2. Saturable absorption region absorbing laser light produced from the active layer is formed in part of the active layer under the current blocking layer.
|
