| 摘要 |
PURPOSE: A method for fabricating a nitride semiconductor light emitting device is provided to control a defect caused by strain by forming an intermediate layer between an n-gallium nitride layer and a well layer where self-strain generated in the intermediate layer is minimized and composition of indium is increased. CONSTITUTION: A nitride semiconductor layer grows on a substrate(30). A III-V group compound intermediate layer grows while indium is supplied to the upper portion of the nitride semiconductor layer and temperature is decreased from T1 deg.C to T2 deg.C. A well layer(33) and a barrier layer(34) alternatively grows on the III-V compound intermediate layer at least once to form an active layer. |
