| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a semiconductor light-emitting element, having a structure in which an electrostatic capacity can be reduced. <P>SOLUTION: A multilayer semiconductor part 24 is provided on a semiconductor substrate 4 along the side face of the part 12. A second conductivity-type III-V compound semiconductor layer 20 is provided on the part 12 and a multilayer semiconductor part 24. The part 24 has first to fourth semiconductor layers 36, 38, 40 and 42, sequentially disposed on the substrate 4. The layer 36 is a first conductivity-type III-V compound semiconductor layer, extended along the side face of the part 12 and the main surface of the substrate 4. The layer 38 is a second conductivity-type III-V compound semiconductor layer, extended along the layer 36. The layer 40 is a first conductivity-type III-V compound semiconductor layer, extended along the layer 38. The layer 42 is a second conductivity-type III-V compound semiconductor layer provided on the layer 40. <P>COPYRIGHT: (C)2004,JPO</p> |
