| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor memory in which transmission speed of read-out data to a pair of data buses from a pre-amplifier is increased at high frequency operation. SOLUTION: A pre-amplifier 48 comprises an amplifying section 122 amplifying a signal level of read-out data, a latency shifter 124 outputting read-out data to a pair of data lines PDD,/PDD in accordance with a signal RDT deciding timing at which read-out data is outputted to a pair of data buses DB,/DB, and a driver 126 outputting the read-out data to the pair of data buses DB,/DB. The amplifying section 122 receives a signal RDT, when the signal RDT is in a H level already with timing at which a signal level of read-out data is amplified, the amplifying section 122 outputs the read-out data to the part of data lines PDD,/PDD while bypassing the latency shifter 124. COPYRIGHT: (C)2004,JPO
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