发明名称 POLISHING SLURRY
摘要 <p><P>PROBLEM TO BE SOLVED: To provide a new polishing slurry by which the surface of a polishing object comprising an oxide single crystal or silicon dioxide is polished to the smooth and flat surface within a shorter time. <P>SOLUTION: The polishing slurry is constituted of water, polishing particles and a polishing accelerator, and acidity or alkalinity of the slurry is the acidity. The pH of the slurry is 2-5. An organic acid or an organic acid salt is used as the polishing accelerator. Phthalic acid is used as the organic acid, and phthalic acid salt is used as the organic acid salt. Preferably, potassium hydrogen phthalate is suitably used. The polishing of the polishing object W is carried out by holding the polishing object W by a holder 13, and pushing the surface of the polishing object W held by the holder 13 to the surface of a pad 11 of a level block 12 while rotating the level block 12 and the holder 13 in the directions of R and r respectively, and feeding the polishing slurry through a nozzle 14 to the surface of the pad 11 on the level plate 12. <P>COPYRIGHT: (C)2004,JPO</p>
申请公布号 JP2003306669(A) 申请公布日期 2003.10.31
申请号 JP20020112786 申请日期 2002.04.16
申请人 NIHON MICRO COATING CO LTD 发明人 OI HISATOMO;KOBAYASHI TOSHIHIRO
分类号 B24B37/00;C09K3/14;H01L21/304;(IPC1-7):C09K3/14 主分类号 B24B37/00
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