| 摘要 |
<P>PROBLEM TO BE SOLVED: To suppress a leakage current in a III nitride compound semiconductor element to be irradiated with an electron beam. <P>SOLUTION: An end face formed by etching after the electron beam is irradiated is acid-treated in the III nitride compound semiconductor element which has an n-type electrode and a p-type electrode at one surface side thereof, in which the n-type electrode is formed in an n-type layer surface-exposed by etching and the p-type electrode is doped with a p-type impurity and irradiated with the electron beam. <P>COPYRIGHT: (C)2004,JPO |
