| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for forming a crystalline semiconductor film in simple processes. SOLUTION: This method for forming a crystalline semiconductor film comprises a process for forming a semiconductor film, a process for forming heating/cooling control film wherein a heating/cooling control film is so formed thickly as to have a cap region melting energy larger than a bare region melting energy, a first irradiation process wherein irradiation with a first laser beam is performed with an energy larger than the cap region melting energy, a cap region crystallizing process wherein a cap region semiconductor film is crystallized based on a bare region semiconductor film, a second irradiation process wherein irradiation with a second laser beam is performed with an energy that is larger than the bare region melting energy and smaller than the cap region melting energy, a bare region crystallizing process wherein the bare region semiconductor film is crystallized based on the cap region semiconductor film, and a removing process wherein the heating/cooling control film is removed from the semiconductor film. COPYRIGHT: (C)2004,JPO
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