| 摘要 |
Protection film excellent in protection characteristics and easily removed by mechanical friction, is formed by enabling CMP at high rate for copper or copper-based alloy while suppressing polishing scratches, delamination, dishing and erosion, particularly, enabling CMP for copper or copper-based alloy on an easily delaminating low dielectric constant insulation film, and using plural corrosion inhibitors, for example, BTA and imidazole together in an abrasive-free polishing solution. |
