III-NITRIDE LASER ACTIVATED SEMICONDUCTOR SWITCH AND ASSOCIATED METHODS OF FABRICATION AND OPERATION

摘要

A laser activated switch includes a substrate, such as a sapphire or a silicon carbide substrate, with two opposed major surfaces including a ground layer on one surface. Extending laterally across the first surface of the substrate, the laser activated switch includes at least one pair of first and second electrically conductive electrodes. Each electrode of the pair of electrodes is spaced apart from one another to thereby define a gap. Additionally, the laser activated switch includes at least one III-nitride-based photoconductor extending laterally across at least part of the surface of the substrate opposite the ground layer, and extending across the gap defined between the pairs of electrodes. Upon being illuminated, the photoconductor becomes conductive and changes the switch from an "off" to an "on" state. In one embodiment, the laser activated switch further includes first and second terminals electrically connected to the first and second electrodes, respectively.