TRANSISTOR-ARRANGEMENT, METHOD FOR OPERATING A TRANSISTOR-ARRANGEMENT AS A DATA STORAGE ELEMENT AND METHOD FOR PRODUCING A TRANSISTOR-ARRANGEMENT

摘要

The invention relates to a transistor-arrangement (200) with a substrate (201) and a vertical transistor, comprising a first electrode area (204), a second electrode area (205) arranged essentially thereabove, a channel area (203) arranged therebetween, in addition to a gate-area (207) and a channel area (203) and an electrically insulating sequence of layers (206) arranged therebetween, whereby two spatially separate sections (208, 209) of the electrically insulating sequence of layers (206) act as charge carriers for storage purposes.