发明名称 Ion exchange materials for chemical mechanical polishing
摘要 Ion exchange materials are employed in CMP methodologies to polish or thin a semiconductor substrate or a layer thereon. Embodiments include a polishing pad having an ion exchange material thereon and polishing a semiconductor substrate or a layer thereon with the polishing pad or a CMP composition including an ion exchange material therein and polishing the substrate or a layer thereon with the CMP composition or both.
申请公布号 US6638143(B2) 申请公布日期 2003.10.28
申请号 US20000737414 申请日期 2000.12.14
申请人 APPLIED MATERIALS, INC. 发明人 WANG YUCHUN;TSAI STAN D.;WIJEKOON KAPILA;BAJAJ RAJEEV;REDEKER FRED C.
分类号 B08B1/04;B08B3/08;B24B37/00;B24B37/04;B24B53/007;B24D3/00;B24D3/34;B24D11/00;C09K3/14;H01L21/00;H01L21/304;(IPC1-7):B24B1/00 主分类号 B08B1/04
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