发明名称 |
Ion exchange materials for chemical mechanical polishing |
摘要 |
Ion exchange materials are employed in CMP methodologies to polish or thin a semiconductor substrate or a layer thereon. Embodiments include a polishing pad having an ion exchange material thereon and polishing a semiconductor substrate or a layer thereon with the polishing pad or a CMP composition including an ion exchange material therein and polishing the substrate or a layer thereon with the CMP composition or both.
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申请公布号 |
US6638143(B2) |
申请公布日期 |
2003.10.28 |
申请号 |
US20000737414 |
申请日期 |
2000.12.14 |
申请人 |
APPLIED MATERIALS, INC. |
发明人 |
WANG YUCHUN;TSAI STAN D.;WIJEKOON KAPILA;BAJAJ RAJEEV;REDEKER FRED C. |
分类号 |
B08B1/04;B08B3/08;B24B37/00;B24B37/04;B24B53/007;B24D3/00;B24D3/34;B24D11/00;C09K3/14;H01L21/00;H01L21/304;(IPC1-7):B24B1/00 |
主分类号 |
B08B1/04 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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