发明名称 Device produced by a process of controlling grain growth in metal films
摘要 A process for controlling grain growth in the microstructure of thin metal films (e.g., copper or gold) deposited onto a substrate. In one embodiment, the metal film is deposited onto the substrate to form a film having a fine-grained microstructure. The film is heated in a temperature range of 70-100° C. for at least five minutes, wherein the fine-grained microstructure is converted into a stable large-grained microstructure. In another embodiment, the plated film is stored, after the step of depositing, at a temperature not greater than -20° C., wherein the fine-grained microstructure is stabilized without grain growth for the entire storage period.
申请公布号 US6638374(B2) 申请公布日期 2003.10.28
申请号 US20020050285 申请日期 2002.01.16
申请人 INTERNATIONAL BUSINESS MACHINES CORPORATION 发明人 DEHAVEN PATRICK W.;GOLDSMITH CHARLES C.;HURD JEFFERY L.;KAJA SURYANARAYANA;LEGERE MICHELE S.;PERFECTO ERIC D.
分类号 H01L21/28;C25D5/50;C25D7/00;H01L21/288;H01L21/3205;H01L23/52;H05K1/09;H05K3/22;(IPC1-7):B32B15/02 主分类号 H01L21/28
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