| 摘要 |
PROBLEM TO BE SOLVED: To improve operation reliability and efficiency, and easily achieve high precision or high density, and in addition, to achieve high yield. SOLUTION: As floating gates of sidewall, a floating gate 105a is arranged at a source region 101 and a floating gate 105b at a drain region 103, thereby a memory device having a high retention at room temperature or high reliability is realized, and a non-volatile memory device that can be precisely formed and easily achieved in realized. Moreover, formation of an inverse layer due to excess writing (over-deletion) is suppressed, leakage currents are not produced, and accurate data read-out can be made. COPYRIGHT: (C)2004,JPO
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