发明名称 |
Method for reducing the resistivity of p-type II-VI and III-V semiconductors |
摘要 |
The resistivity of a p-doped III-V or a p-doped II-VI semiconductor material is reduced. The reduction of resistivity of the p-type III-V or a II-VI semiconductor material is achieved by applying an electric field to the semiconductor material. III-V nitride-based light emitting diodes are prepared.
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申请公布号 |
US2003199171(A1) |
申请公布日期 |
2003.10.23 |
申请号 |
US20020127345 |
申请日期 |
2002.04.19 |
申请人 |
KOPIN CORPORATION |
发明人 |
RICE PETER;HON SCHANG-JING;WANG ALEXANDER;O'CONNOR KEVIN |
分类号 |
H01L21/326;H01L33/00;(IPC1-7):C30B1/00;C30B15/00;C30B21/06;C30B27/02;C30B28/10;C30B30/04;C30B23/00;C30B25/00;C30B28/12;C30B28/14;H01L21/302;H01L21/461 |
主分类号 |
H01L21/326 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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