| 摘要 |
<p>A resistive memory device (110) and method of manufacturing thereof comprising a cap layer (140) and hard mask layer (142) disposed over magnetic stacks (114), wherein either the cap layer (140) or hard mask layer (142) comprise WN. A seed layer (136) disposed beneath the magnetic stacks (114) may also be comprised of WN. The use of the material WN improves etch process selectivity during the manufacturing process.</p> |
