| 摘要 |
Methods and computer program products are provided for analyzing a crystalline structure, such as a wafer or an epitaxial layer in more detail, including the portion of the crystalline structure proximate the edge. The methods and computer program products of one aspect determine the average thickness and the normalized profile of a crystalline structure with enhanced detail. Additionally, the method and computer program product of another aspect represent the profile proximate the edge of the crystalline structure with a pair of lines that are selected to permit the profile of the crystalline structure proximate the edge of the crystalline structure to be characterized in more detail. Further, the method of yet another aspect permits the average edge profile for a plurality of crystalline structure to be defined.
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