发明名称 |
Method and system for reducing charge gain and charge loss in interlayer dielectric formation |
摘要 |
A method and system for insulating a lower layer of a semiconductor device from an upper layer of the semiconductor device is disclosed. The method and system include providing an interlayer dielectric on the lower layer. The interlayer dielectric is capable of gap filling while using only species of relatively low mobility. The method and system also include planarizing a surface of the interlayer dielectric.
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申请公布号 |
US6635943(B1) |
申请公布日期 |
2003.10.21 |
申请号 |
US20000533617 |
申请日期 |
2000.03.22 |
申请人 |
ADVANCED MICRO DEVICES, INC. |
发明人 |
HUI ANGELA T.;PHAM TUAN DUC;HUANG RICHARD J.;RAMSBEY MARK T.;YOU LU |
分类号 |
H01L21/768;H01L21/8234;(IPC1-7):H01L29/00 |
主分类号 |
H01L21/768 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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