发明名称 MICROWAVE INTEGRATED CIRCUIT SEMICONDUCTOR ELEMENT AND HIGH FREQUENCY MODULE
摘要 <P>PROBLEM TO BE SOLVED: To reduce energy of a parallel-plate mode electromagnetic wave being generated internally. <P>SOLUTION: The microwave integrated circuit semiconductor element 4a comprises a microwave semiconductor element 9 and a coplanar transmission line 13 for inputting/outputting a signal to/from the microwave semiconductor element formed on the surface of a planar semiinsulating substrate 8 wherein a resistor film 21 is formed on at least one of the rear surface 14 opposite to the surface, a pair of end faces 22 orthogonal to the coplanar transmission line 13 or a pair of side faces 23 parallel with the coplanar transmission line 13 of the semiinsulating substrate 8. <P>COPYRIGHT: (C)2004,JPO
申请公布号 JP2003297971(A) 申请公布日期 2003.10.17
申请号 JP20020092999 申请日期 2002.03.28
申请人 ANRITSU CORP 发明人 NISHIJIMA HIDENORI;SENDA HIROAKI;TOSAKA ASAMITSU
分类号 H01L23/12 主分类号 H01L23/12
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