PHASE CHANGEABLE MEMORY CELL HAVING VOID AND MANUFACTURING METHOD THEREOF

摘要

PURPOSE: A phase changeable memory cell having a void and manufacturing method thereof are provided to be capable of minimizing the thermal interference between neighboring cells. CONSTITUTION: A phase changeable memory cell is provided with a lower interlayer dielectric(66) formed at the upper portion of a semiconductor substrate(51), a plurality of storage node plugs(70) contacting the predetermined regions of the semiconductor substrate through the lower interlayer dielectric, and a plurality of information storage elements(74) formed on each storage node plug. The phase changeable memory cell further includes a plate electrode(80) formed at the upper portion of the resultant structure for being electrically connected with each upper surface of the information storage elements and a void(75a) for partially exposing the information storage element.