发明名称 POROUS SIC GUIDE RING FOR CHEMICAL VAPOR DEPOSITION(CVD) REACTOR AND METHOD FOR MANUFACTURING THE SAME
摘要 PURPOSE: A porous SiC guide ring for a CVD(Chemical Vapor Deposition) reactor and a method for manufacturing the same are provided to be capable of effectively adsorbing by-product due to the high porosity of the guide ring. CONSTITUTION: A CVD reactor is provided with a dispersing head(11) for jetting reaction gas to a wafer(7), a porous guide(9) located at the upper portion of the dispersing head, and a guide ring(1) having a hole for stably loading the wafer, attached on the lower portion of the porous guide. At this time, the thickness of the guide ring is smaller than that of the wafer. Preferably, a porous SiC guide ring is used as the guide ring. Preferably, the porosity of the porous SiC guide ring is in the range of 15-20 %.
申请公布号 KR20030080600(A) 申请公布日期 2003.10.17
申请号 KR20020019313 申请日期 2002.04.09
申请人 DS TECHNO CO., LTD. 发明人 AHN, HAK JUN
分类号 H01L21/205;(IPC1-7):H01L21/205 主分类号 H01L21/205
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