| 发明名称 |
Light-emitting semiconductor device having quantum dots |
| 摘要 |
A semiconductor light-emitting device comprising a light-emitting layer (105) comprising quantum dots formed by etching said light-emitting layer using a masking layer consisting of an array of dots of e.g. iron oxide formed from metal aggregates contained in metalloprotein complex. <IMAGE> |
| 申请公布号 |
EP1154493(A3) |
申请公布日期 |
2003.10.15 |
| 申请号 |
EP20010118939 |
申请日期 |
1998.05.29 |
| 申请人 |
MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. |
发明人 |
YAMASHITA, ICHIRO |
| 分类号 |
B05D1/20;H01L21/225;H01L21/308;H01L21/329;H01L21/768;H01L21/8222;H01L27/15;H01L29/76;H01L33/06;H01L33/18;H01L49/00 |
主分类号 |
B05D1/20 |
| 代理机构 |
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代理人 |
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| 地址 |
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