| 摘要 |
PROBLEM TO BE SOLVED: To enable contamination of another site due to the diffusion of a constituting element of a gate insulating film to be suppressed, even when a silicate is used for the insulating film, and to contribute to improvements in yield and in the characteristics. SOLUTION: A field effect transistor comprises a gate electrode 104 provided on a silicon substrate 101 via a high-dielectric constant gate insulating film 103 made of the silicate, and a sidewall insulating film 107 provided on sides of the insulating film 103 and the electrode 104. In this transistor, the film 107 is formed of an Al-Si-O-N film, having a thickness in the substrate surface direction of about 5 nm. COPYRIGHT: (C)2004,JPO
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