| 摘要 |
<p>A manufacturing method is provided for an integrated circuit memory with closely spaced wordlines (525) (526) formed by using the hard mask extensions (524). A charge-trapping dielectric material (504) is deposited over a semiconductor substrate (501) and first and second bitlines (512) are formed therein. A wordline material (515) and a hard mask material (515) are deposited over the wordline material (515). A photoresist material (518) is deposited over the hard mask material (515) and is processed to form a patterned photoresist material (518). The hard mask material (515) is processed using the patterned photoresist material (518) to form a patterned hard mask material (519). The patterned photoresist is then removed. A hard mask extension material (524) is deposited over the wordline material (515) and is processed to form a hard mask extension (524). The wordline material (515) is processed using the patterned hard mask material (519) and the hard mask extension (524) to form a wordline (525), and the patterned hard mask material (519) and the hard mask extension (524) are then removed.</p> |
