发明名称 |
GAS INJECTION DEVICE OF REACTOR FOR METAL ORGANIC CHEMICAL VAPOR DEPOSITION EQUIPMENT |
摘要 |
PURPOSE: A gas injection device of reactor for metal organic chemical vapor deposition (MOCVD) equipment is provided to prevent oxide from deposited in the nozzle, thereby prevent clogging of the nozzles accordingly by injecting evaporation raw material and reaction gas independently through separate nozzles. CONSTITUTION: In a gas injection device of reactor for metal organic chemical vapor deposition equipment in which evaporation raw material and reaction gas are injected onto the surface of an object to be treated inside the reactor when manufacturing high temperature superconducting thin film using chemical deposition method, the gas injection device of reactor for metal organic chemical vapor deposition equipment comprises a diffusion pipe(11) for injecting the evaporation raw material by receiving the evaporation raw material in the reactor; and a reaction gas guiding pipe(16) for injecting the reaction gas to the injection front side of the diffusion pipe(11) by receiving the reaction gas from the inside of the reactor, wherein the evaporation raw material and reaction gas are independently injected through nozzles(14,18) of the diffusion pipe(11) and reaction gas guiding pipe(16).
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申请公布号 |
KR20030078203(A) |
申请公布日期 |
2003.10.08 |
申请号 |
KR20020017086 |
申请日期 |
2002.03.28 |
申请人 |
HAN VAC CO., LTD. |
发明人 |
HUH, YUN SEONG;NAM, SEUNG JAE;CHOI, U SEONG;AHN, MYEONG HWAN;KIM, CHAN JUNG |
分类号 |
C23C16/448;(IPC1-7):C23C16/448 |
主分类号 |
C23C16/448 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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