发明名称 METHOD OF GROWING SINGLE CRYSTAL
摘要 PROBLEM TO BE SOLVED: To make it possible to use a crucible and a support base formed by graphite having a high thermal conductivity in an oxygen atmosphere or an atmosphere containing oxygen, such as air, and to inexpensively provide a excellent quality single crystal. SOLUTION: In a method of growing the single crystal, using a vertical Bridgment method comprising using a growth furnace in which a temperature gradient based on the melting temperature of the single crystal to be grown is provided in a furnace tube by using a heater, arranging the graphite crucible in the furnace tube, filling a seed crystal and a single crystal raw material in the crucible, and growing the crystal by moving the crucible in the growth furnace by the support base made of graphite and connected to the outer bottom part of the crucible, oxygen or an oxygen containing atmosphere is used as the atmosphere in the furnace tube, and the crucible and the support base, each having a surface coated with a non-oxidizing material are used. COPYRIGHT: (C)2004,JPO
申请公布号 JP2003286095(A) 申请公布日期 2003.10.07
申请号 JP20020093682 申请日期 2002.03.29
申请人 KINSEKI LTD 发明人 WAKABAYASHI HIROKO
分类号 C30B29/22;(IPC1-7):C30B29/22 主分类号 C30B29/22
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