| 摘要 |
PROBLEM TO BE SOLVED: To enable obtaining a magnetoresistance effect element wherein MR ratio is large when the size is reduced, thermal stability is superior and switching magnetic field is small, and to provide a magnetic storage device using the magnetoresistance effect element. SOLUTION: This magnetoresistance effect element is provided with a storage layer wherein a plurality of ferromagnetic layers are laminated via nonmagnetic layers, a magnetic film having at least one ferromagnetic layer, and a tunnel barrier layer arranged between the storage layer and the magnetic layer. The ferromagnetic layer of the storage layer is composed of Ni-Fe-Co ternary alloy and, in a ternary phase diagram of Ni-Fe-Co, has composition selected from either one composition region of an inside composition region surrounded by a straight line of Co<SB>90(at.)</SB>Fe<SB>10(at.)</SB>- Fe<SB>30(at.)</SB>Ni<SB>70(at.)</SB>, a straight line of Fe<SB>80(at.)</SB>Ni<SB>20(at.)</SB>-Fe<SB>30(at.)</SB>Ni<SB>70(at.)</SB>and a straight line of Fe<SB>80(at.)</SB>Ni<SB>20(at.)</SB>-Co<SB>65(at.)</SB>Ni<SB>35(at.)</SB>, and an inside composition region surrounded by a straight line of Fe<SB>80(at.)</SB>Ni<SB>20(at.)</SB>-Co<SB>65(at.)</SB>Ni<SB>35(at.)</SB>, a straight line of Co<SB>90(at.)</SB>Fe<SB>10(at.)</SB>-Fe<SB>70(at.)</SB>Ni<SB>30(at.)</SB>and a straight line of Co<SB>90(at.)</SB>Fe<SB>10(at.)</SB>-Fe<SB>30(at.)</SB>Ni<SB>70(at.)</SB>. The maximum roughness on an interface between the storage layer and the tunnel barrier layer and an interface between the magnetic layer and the tunnel barrier later is at most 0.4 nm. COPYRIGHT: (C)2004,JPO |
