| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a manufacturing method of a ferroelectric layer for improving surface morphology where the surface morphology is improved, a ferroelectric memory device and a piezoelectric device where the ferroelectric layer is applied. <P>SOLUTION: The manufacturing method of the ferroelectric layer comprises steps of (a) forming a ferroelectric film 20, and (b) forming an embedded insulating film 30 on the ferroelectric film 20. The step (b) includes a step of stacking a raw material liquid layer 32 on the ferroelectric film 20 by turning raw material liquid for the embedded insulating film into mist. <P>COPYRIGHT: (C)2004,JPO |
