发明名称 SEMICONDUCTOR LASER
摘要 PROBLEM TO BE SOLVED: To provide a semiconductor laser which enables the stabilization of characteristics of an actual refractive index waveguide type semiconductor laser having a ridge stripe as well as the manufacture of the same with a good yield. SOLUTION: A first conductive type first clad layer 2, an active layer 3, a second conductive type second clad layer 4, a ridge shape second conductive type third clad layer 7, a cap layer 8 on the ridge 6 of the third clad layer 7, a first conductive type current block layer 9 on the side surface of the ridge 6 of the third clad layer 7 and a first conductive type protective layer 10 on the side surface of the current block layer 9 are sequentially formed on a semiconductor base board 1. At least one piece of a second conductive type fourth clad layer 11, containing Al, is formed on the cap layer 8, the current block layer 9 or the protective layer 10. COPYRIGHT: (C)2004,JPO
申请公布号 JP2003283040(A) 申请公布日期 2003.10.03
申请号 JP20020087884 申请日期 2002.03.27
申请人 MATSUSHITA ELECTRIC IND CO LTD 发明人 KONDO OSAMU;MAKITA KOJI;ASAKA HIROSHI;TAKAMORI AKIRA;KAWADA TOSHIYA
分类号 H01S5/042;(IPC1-7):H01S5/042 主分类号 H01S5/042
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