SRAM MEMORY CELL AND ITS MANUFACTURING METHOD

摘要

PROBLEM TO BE SOLVED: To provide an SRAM memory cell in which a floating effect occurring when an SOI substrate is used and to provide a method for manufacturing the same.

SOLUTION: The method for manufacturing the SRAM memory cell comprises a step of coupling a floated body of an access transistor AT of the SRAM to a source region of a driver transistor DT via a body extended part formed by extending an active region. Thus, a passivation effect is prevented. An undesired pn junction formed between the body extended part and the source region of the driver transistor is electrically coupled by forming a silicide or overetching a VSS contact to form a conductive contact plug.

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