| 摘要 |
PROBLEM TO BE SOLVED: To provide a technique for efficiently forming an ohmic connection between a semiconductor and metal in a short time. SOLUTION: A rotating body or a vibrating body having a cylindrical, disk- like, or brush-shaped electrode material made of aluminum, etc., at an electrode formation part of silicon or the other semiconductor is set at high-speed operation and brought into contact with a semiconductor surface to stick the electrode material on the semiconductor surface by friction locally generated on the semiconductor surface and then the effect of sintering is generated with local frictional heat to form an ohmic electrode. COPYRIGHT: (C)2004,JPO |
