| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a storage stability composition for easily and effectively forming a high-grade tantalum oxide film with less leak current even under high-humidity conditions by a simple coating application method, and a method for forming the tantalum oxide film. <P>SOLUTION: The composition contains [A] a reaction product of (a1) tantalum alkoxide with (a2) at least one compound selected from an amino alcohol, a compound having ≥2 hydroxy groups in the molecule (exclusive of amino alcohol), β-diketone, β-ketoester, β-dicarboxylate, lactic acid, ethyl lactate and 1,5-cyclooctadiene, [B] orthocarboxylate, and [C] an acid. The tantalum oxide film is formed by applying such composition onto a substrate and treating the composition by heat and/or light. <P>COPYRIGHT: (C)2004,JPO |
