| 摘要 |
PURPOSE: A method for detecting the position of ESD(ElectroStatic Discharge) damage is provided to minimize damage due to over etch by using an emission microscope and SEM(Scanning Electron Microscope). CONSTITUTION: An ESD stress is applied to a semiconductor chip with a package structure. A portion of the package structure is removed. A window is formed to expose a damage forming portion by etching the semiconductor chip using an FIB(Focused Ion Beam). A photon generation position detects by using an emission microscope. When the photon detects, an ESD damage position(16) in a semiconductor substrate detects by using SEM.
|
