| 摘要 |
<P>PROBLEM TO BE SOLVED: To improve manufacturing efficiency and element accuracy by carrying out various positionings readily and properly during manufacturing of an amplification type solid-state image sensing element (CMOS image sensor) of a so- called backside illumination type. <P>SOLUTION: A positioning mark is formed in a wiring surface side of a silicon substrate by appropriating an active region or a gate electrode used in a MOS transistor preparation process, for example, for stepper positioning in a manufacturing process of a backside illumination type CMOS image sensor. A silicide film using an active region can be used for the positioning mark. Then, such a positioning mark is read from a backside by red light or near infrared light and positioning of a stepper is carried out. Positioning can be also carried out by forming a positioning mark in a silicon oxide film in a rear (illumination surface) side in accordance with a positioning mark in a wiring surface side. <P>COPYRIGHT: (C)2003,JPO |
