| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To decrease a capture level at an interface between a semiconductor layer and an insulating layer. <P>SOLUTION: An insulating layer (104), an aluminum layer (107) and a light absorbing layer (105) are laminated on a semiconductor layer (103) formed on a substrate (101). The light absorbing layer (105) is irradiated with light from a light source (100) while the light source (100) and the substrate (101) are relatively moved to heat the light absorbing layer (105). Thus, the heat treatment of the insulating layer (104) is carried out to generate atomic hydrogen by the reaction of OH-bond and/or water within the insulating layer (104) at the interface between the aluminum layer (107) and the insulating layer (104), and further fixed electric charge within the insulating layer (104) is removed, so that a capture level at the interface of the semiconductor layer (103)/ insulating layer (104) is decreased. <P>COPYRIGHT: (C)2003,JPO</p> |
