| 摘要 |
PROBLEM TO BE SOLVED: To make a semiconductor device adaptable to a package with a lead terminal and a CSP without increasing cost or size of the semiconductor device. SOLUTION: Metal wiring layers 7 are formed via an insulating layer 5 on the active element surface of a semiconductor substrate 3. The metal wiring layers 7 are disposed around four corners of a semiconductor chip area 9 which includes both wire bonding a pad area 11 and a rewiring pad area 13. A passivation film 15 is formed on the insulating layer 5 and the metal wiring layers 7. For the package with a lead terminal, the passivation film 15 on the wire bonding pad areas 11 is selectively removed to form pad openings. For the CSP, the passivation film 15 on the rewiring pad area 13 is selectively removed to form pad openings. COPYRIGHT: (C)2003,JPO
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