| 摘要 |
<P>PROBLEM TO BE SOLVED: To reduce the number of steps in a manufacture process, to prevent the defect of a contact between a substrate and a lower electrode (first electrode) and a cylinder fall and to improve yield by manufacturing a cylindrical capacitor having a support structure without using an adhesion enhanced layer. <P>SOLUTION: The method of manufacturing the semiconductor device has a step for forming a support film having a hole, a step for forming the cylindrical platinum first electrode in the hole of the support film, a step for forming a reaction layer from chemical reaction on the interface of the first electrode and the support film, a step for forming an insulating film on the first electrode, and a step for forming a conductive second electrode on the insulating film. <P>COPYRIGHT: (C)2003,JPO |
