| 摘要 |
A plasma processing method in which plasma can be fired stably with a low high frequency power and a low gas pressure even after long time operation by applying a DC voltage of -0.5 kV, for example, from a DC power supply (118) to a lower electrode (104) before a high frequency power is applied from a high frequency power supply (114) to the lower electrode (104) through a matching unit (112) when the surface of a wafer W mounted on the lower electrode (104) disposed in a processing container (102) is subjected to a specified plasma processing with plasma of a processing gas formed by applying a high frequency power to the processing gas introduced into the airtight processing container (102).
|
