| 摘要 |
A trench cell for use in a DRAM array includes a vertical selection transistor of a first conductivity type at the-seen in the bit line direction-first side of the trench hole, a blocking doping region near the surface, of a second conductivity type, is provided adjacent to the trench hole, the blocking doping region lying opposite the vertical selection transistor. As a result, leakage currents can be avoided and, in addition, the trench cells can be disposed at a shorter distance from one another.
|
