摘要 |
The invention relates to a method for the selective silicidation of contact areas that allow the production of highly integrated circuits, preferably in a CMOS or BiCMOS process. To this end, a metal oxide layer (14) that contains for example praseodymium oxide is deposited onto a prepared wafer (12). A silicon layer (16) and on top of said silicon layer a cover layer (18) is deposited onto the metal oxide layer (14), said cover layer being laterally structured. In a subsequent tempering step in an oxygen-free, reducing gas atmosphere the silicon layer (16) and the metal oxide layer (14) are converted to a metal silicide layer in lateral sections (20, 22) in which the cover layer (18) was previously removed. |
申请人 |
IHP GMBH-INNOVATIONS FOR HIGH PERFORMANCE MICROELE;KRUEGER, DIETMAR;GORYACHKO, ANDRIY;KURPS, RAINER;LIU, JING, PING;OSTEN, HANS-JOERG |
发明人 |
KRUEGER, DIETMAR;GORYACHKO, ANDRIY;KURPS, RAINER;LIU, JING, PING;OSTEN, HANS-JOERG |