METHOD FOR PRODUCING A MICROELECTRONIC COMPONENT AND COMPONENT PRODUCED ACCORDING TO SAID METHOD

摘要

The invention relates to methods for producing a semiconductor element in a GaAs compound semiconductor material, especially a heterostructure GaAs semiconductor material, for example a hetero-bipolar transistor. The invention allows production of a low-impedance contact resistance with high long-term stability of the component properties in a simple and cost-effective process profile.