发明名称 |
Lateral overflow drain, anti-blooming structure for CCD devices having improved breakdown voltage |
摘要 |
An image sensor having an anti-blooming structure, where the image sensor comprises a substrate of a first conductivity type; a dielectric having a first thin portion and a second thick portion; a buried channel of the second conductivity type within the substrate substantially spanning the first thin portion; and a lateral overflow drain region of the second conductivity type disposed substantially in its entirety spanning a portion of the second thick portion for collecting excess photogenerated charges for preventing blooming.
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申请公布号 |
US6624453(B2) |
申请公布日期 |
2003.09.23 |
申请号 |
US20010945034 |
申请日期 |
2001.08.31 |
申请人 |
EASTMAN KODAK COMPANY |
发明人 |
BANGHART EDMUND K.;STEVENS ERIC G. |
分类号 |
H01L27/148;(IPC1-7):H01L31/062 |
主分类号 |
H01L27/148 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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