发明名称 |
Process for preparation of polycrystalline silicon |
摘要 |
A process for preparing polycrystalline silicon comprising the steps of (A) reacting trichlorosilane with hydrogen thereby forming silicon and an effluent mixture comprising tetrachlorosilane and disilane described by formula HnCl6-nSi2 where n is a value of 0 to 6 and (B) co-feeding the effluent mixture and hydrogen to a reactor at a temperature within a range of about 600° C. to 1200° C. thereby effecting hydrogenation of the tetrachlorosilane and conversion of the disilane to monosilanes.
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申请公布号 |
US7033561(B2) |
申请公布日期 |
2006.04.25 |
申请号 |
US20030472683 |
申请日期 |
2003.09.23 |
申请人 |
DOW CORNING CORPORATION |
发明人 |
KENDIG JAMES EDWARD;LANDIS DAVID RUSSELL;MCQUISTON TODD MICHAEL;ZALAR MICHAEL MATTHEW |
分类号 |
C01B33/02;C01B33/03;C01B33/035;C01B33/04;C01B33/107 |
主分类号 |
C01B33/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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