| 摘要 |
PURPOSE: A semiconductor LED(Light Emitting Diode) and a method for manufacturing the same are provided to be capable of improving light emitting efficiency by improving the structure of the semiconductor LED. CONSTITUTION: A semiconductor LED is provided with a transparent substrate(20), an epitaxial layer having a multilayer thin film structure, formed at one surface of the transparent substrate, wherein the epitaxial layer includes an active layer(32), the first and second film(31,33) formed at the upper and lower portion of the active layer and an N-type and P-type electrode(36,35) formed at the first and second film, respectively, a passivation film(37) and a protecting layer(21) formed at the lower portion of the epitaxial layer for protecting the epitaxial layer, and a plurality of metal electrodes(24,23) connected to the N-type and P-type electrode, respectively. |
