| 摘要 |
PURPOSE: A method for fabricating a semiconductor device is provided to prevent a wordline from being short-circuited with a bitline by filling a portion from which a buffer oxide layer is removed with an insulation pattern made of a silicon nitride layer. CONSTITUTION: The wordline(202) is formed on a semiconductor substrate(200). A hard mask is formed on the wordline. The buffer oxide layer(206) and an insulation spacer(208) are sequentially formed on the side surface of the wordline. A bitline landing plug(210a) is formed to fill the space between the wordlines including the buffer oxide layer, the insulation spacer and the hard mask. A cleaning process is performed on the substrate including the bitline landing plug. The insulation pattern(221) is formed to fill the buffer oxide layer etched by the cleaning process. An insulation layer having a bitline contact exposing the bitline landing plug is formed on the resultant structure. The bitline that covers the bitline contact and is connected to the bitline landing plug is formed on the insulation layer.
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